| PART |
Description |
Maker |
| LD7215D LD7215 LD7215C |
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC[NEC]
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| SST12LP07-QVCE-K SST12LP07 SST12LP07-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12LP19E-QX8E |
2.4 GHz High-Power, High-Gain Power Amplifier
|
List of Unclassifed Manufacturers
|
| SST12LP14A |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
AMMC-5620 · 6-20 GHz High Gain Amplifier
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| CGD1042H09 |
1 GHz, 23 dB gain high output power doubler
1 GHz, 23 dB gain high output power doubler
|
NXP Semiconductors
|
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| AMMP-5620 |
6 - 20 GHz High Gain Amplife
|
AVAGO TECHNOLOGIES
|
